fast switching thyristor atf585 repetitive voltage up to 800 v mean on-state current 445 a surge current 6 ka final specification turn-off time 15 s mag 06 - issue : 04 symbol characteristic conditions tj [c] value unit blocking v rrm repetitive peak reverse voltage 125 800 v v rsm non-repetitive peak reverse voltage 125 900 v v drm repetitive peak off-state voltage 125 800 v i rrm repetitive peak reverse current v=vrrm 125 40 ma i drm repetitive peak off-state current v=vdrm 125 40 ma conducting i t (av) mean on-state current 180 sin, 50 hz, th=55c, doub le side cooled 445 a i t (av) mean on-state current 180 sin, 1 khz, th=55c, doub le side cooled 400 a i tsm surge on-state current, non repetitive sine wave, 1 0 ms 125 6 ka i2 t i2 t without reverse voltage 180 x1e3 a2s v t on-state voltage on-state current = 800 a 25 1,7 v v t(to) threshold voltage 125 1,30 v r t on-state slope resistance 125 0,325 mohm switching di/dt critical rate of rise of on-state current, min from 75% vdrm up to 1200 a, gate 20v 10 ohm 125 200 a/ s dv/dt critical rate of rise of off-state voltage, mi n linear ramp up to 70% of vdrm 125 500 v/s td gate controlled delay time, typical vd=100v, gate source 20v, 10 ohm , tr=1 s 25 0,6 s tq circuit commutated turn-off time di/dt = 20 a/s, i= 1000 a i = 250 a 125 15 s dv/dt = 200 v/s , up to 75% vdrm q rr reverse recovery charge di/dt = 60 a/s, i= 1000 a i = 1000 a 125 140 c i rr peak reverse recovery current vr = 50 v 104 a i h holding current, typical vd=5v, gate open circuit 25 7 5 ma i l latching current, typical vd=12v, tp=30s 25 150 ma gate v gt gate trigger voltage vd=5v 25 3,5 v i gt gate trigger current vd=5v 25 350 ma v gd non-trigger gate voltage, min. vd=vdrm 125 0,25 v v fgm peak gate voltage (forward) 25 25 v i fgm peak gate current 25 8 a v rgm peak gate voltage (reverse) 25 5 v p gm peak gate power dissipation pulse width 100 s 25 100 w p g(av) average gate power dissipation 25 1 w mounting r th(j-h) thermal impedance, dc junction to heatsink, double s ide cooled 95 c/kw t j operating junction temperature -30 / 125 c f mounting force 4.5 / 5.0 kn mass 55 g tq code d 10 s c 12 s b 15 s a 20 s l 25 s ordering information : atf585 s 08 b tq code m 30 s n 35 s p 40 s r 45 s s 50 s standard specification vdrm&vrrm/100 t 60 s u 70 s w 80 s x 100s y 150s poseico spa via n. lorenzi 8, 16152 genova - italy tel. +39 010 6556234 - fax +39 010 6557519 sales office: tel. +39 010 6556775 - fax +39 010 6445141 poseico spa power semiconductors italian corporation poseico
atf585 fast switching thyristor final specification mag 06 - issue : 04 switching characteristics reverse recovery current tj = 125 c 0 100 200 300 400 500 0 50 100 150 200 250 300 350 400 di/dt [a/s] irr [a] 1000 a 100 a ta = irr / (di/dt) tb = trr - ta softness (s factor) s = tb / ta energy dissipation during recovery er = vr (qrr - irr ta / 2 ) di/dt irr i f ta tb vr reverse recovery charge tj = 125 c 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 di/dt [a/s] qrr [c] 100 a 250 a 1000 a poseico spa power semiconductors italian corporation poseico
atf585 fast switching thyristor final specification mag 06 - issue : 04 cathode terminal type din 46244 - a 4.8 - 0.8 gate terminal type amp 60598 - 1 distributed by on-state characteristic tj = 125 c 0 200 400 600 800 1000 1200 1400 1600 0,6 1,1 1,6 2,1 2,6 on-state voltage [v] on-state current [a] transient thermal impedance double side cooled 0 10 20 30 40 50 60 70 80 90 100 0,001 0,01 0,1 1 10 100 t[s] zth j-h [c/kw] surge characteristic tj = 125 c 0 1 2 3 4 5 6 7 1 10 100 n cycles itsm [ka] poseico spa power semiconductors italian corporation poseico all the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 m. in the interest of product improvement poseico spa reserves the right to change any data given in this data sheet at any time witho ut previous notice. if not stated otherwise the maximum value of ratings (simbol s over shaded background) and characteristics is reported.
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